The role of optical phonons in electrons heating by IR radiation in Ge

An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the co...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Poroshin, V.N., Sarbey, O.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120657
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862632621201162240
author Poroshin, V.N.
Sarbey, O.G.
author_facet Poroshin, V.N.
Sarbey, O.G.
citation_txt The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the contribution of such scattering into absorption of a CO₂ laser radiation enables to achieve a quantitative agreement between the calculated and experimental values for the intervalley redistribution of electrons due to heating carriers by the light wave in Ge at 300 and 77 K.
first_indexed 2025-11-30T12:48:17Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-120657
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-30T12:48:17Z
publishDate 2005
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Poroshin, V.N.
Sarbey, O.G.
2017-06-12T15:42:17Z
2017-06-12T15:42:17Z
2005
The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.
1560-8034
PACS: 05.50. + q, 61.50.Em, 82.20.Fd
https://nasplib.isofts.kiev.ua/handle/123456789/120657
An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the contribution of such scattering into absorption of a CO₂ laser radiation enables to achieve a quantitative agreement between the calculated and experimental values for the intervalley redistribution of electrons due to heating carriers by the light wave in Ge at 300 and 77 K.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
The role of optical phonons in electrons heating by IR radiation in Ge
Article
published earlier
spellingShingle The role of optical phonons in electrons heating by IR radiation in Ge
Poroshin, V.N.
Sarbey, O.G.
title The role of optical phonons in electrons heating by IR radiation in Ge
title_full The role of optical phonons in electrons heating by IR radiation in Ge
title_fullStr The role of optical phonons in electrons heating by IR radiation in Ge
title_full_unstemmed The role of optical phonons in electrons heating by IR radiation in Ge
title_short The role of optical phonons in electrons heating by IR radiation in Ge
title_sort role of optical phonons in electrons heating by ir radiation in ge
url https://nasplib.isofts.kiev.ua/handle/123456789/120657
work_keys_str_mv AT poroshinvn theroleofopticalphononsinelectronsheatingbyirradiationinge
AT sarbeyog theroleofopticalphononsinelectronsheatingbyirradiationinge
AT poroshinvn roleofopticalphononsinelectronsheatingbyirradiationinge
AT sarbeyog roleofopticalphononsinelectronsheatingbyirradiationinge