Buchumschlag

The role of optical phonons in electrons heating by IR radiation in Ge

An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Poroshin, V.N., Sarbey, O.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120657
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Ähnliche Einträge