The role of optical phonons in electrons heating by IR radiation in Ge

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• ISSN: 1560-8034
• Main Authors: Poroshin, V.N., Sarbey, O.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120657
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.

An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the co...