The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2003
• Hauptverfasser: V'yunov, O.I., Kovalenko, L.L., Belous, A.G.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2003
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120701
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The effect of isovalent substitutions
 and dopants of 3d-metals on the
 properties of ferroelectricssemiconductors / O.I. V'yunov, L.L. Kovalenko, A.G. Belous // Condensed Matter Physics. — 2003. — Т. 6, № 2(34). — С. 213-220. — Бібліогр.: 14 назв. — англ.

Electrophysical properties and microstructure of PTCR ceramics of the system
 (Ba,Ca,Sr,Y)TiO3 + y%Mn have been investigated. It has been shown
 that manganese ions increase the potential barrier at grain boundaries and
 form a high-resistance outer layer in (Ba,Ca,Sr,Y)TiO₃...