Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120720
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films / A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 63-70. — Бібліогр.: 48 назв. — англ.

Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence (PL), while PL of as-deposited carbon-rich (x = 0.7) sample was 20 times stron...