Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films
Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence (PL), while PL of as-deposited carbon-rich (x = 0.7) sample was 20 times stron...
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| Date: | 2015 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120720 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films / A.V. Vasin, Y. Ishikawa, A.V. Rusavsky, A.N. Nazarov, A.A. Konchitz, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 63-70. — Бібліогр.: 48 назв. — англ. |