Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modificatio...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120722 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862538397611982848 |
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| author | Red’ko, S.M. |
| author_facet | Red’ko, S.M. |
| citation_txt | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed.
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| first_indexed | 2025-11-24T14:54:05Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120722 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T14:54:05Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Red’ko, S.M. 2017-06-12T17:54:45Z 2017-06-12T17:54:45Z 2015 Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.071 PACS 78.55.Cr, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/120722 The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Article published earlier |
| spellingShingle | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Red’ko, S.M. |
| title | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_full | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_fullStr | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_full_unstemmed | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_short | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_sort | influence of treatment in weak magnetic fields on photoluminescence of gan:si |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120722 |
| work_keys_str_mv | AT redkosm influenceoftreatmentinweakmagneticfieldsonphotoluminescenceofgansi |