Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modificatio...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Cite this: | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
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nasplib_isofts_kiev_ua-123456789-1207222025-02-23T19:02:01Z Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Red’ko, S.M. The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed. 2015 Article Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.071 PACS 78.55.Cr, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/120722 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed. |
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Red’ko, S.M. |
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Red’ko, S.M. Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Semiconductor Physics Quantum Electronics & Optoelectronics |
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Red’ko, S.M. |
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Red’ko, S.M. |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
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influence of treatment in weak magnetic fields on photoluminescence of gan:si |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2015 |
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT redkosm influenceoftreatmentinweakmagneticfieldsonphotoluminescenceofgansi |
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2025-11-24T14:54:05Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 1. P. 71-73.
doi: 10.15407/ spqeo18.01.071
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
71
PACS 78.55.Cr, 71.55.Eq
Influence of treatment in weak magnetic fields
on photoluminescence of GaN:Si
S.M. Red’ko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 525-94-64; e-mail: redko.fotya@gmail.com
Abstract. The long-term transformations of photoluminescence of GaN:Si treated with
pulsed weak magnetic fields have been studied. The defect structure transformations
have been inferred from the radiative recombination spectra within the range
350…650 nm at 300 K. A possible mechanism of observed modifications related with
the magnetic field induced destruction of metastable complexes has been discussed.
Keywords: photoluminescence, weak magnetic field, gallium nitride.
Manuscript received 15.09.14; revised version received 22.12.14; accepted for
publication 19.02.15; published online 26.02.15.
1. Introduction
Processes related with the influence of weak magnetic
field (WMF) on the impurity-defect composition of
semiconductor compounds A
III
B
V
were studied in [1-3].
It was found that magnetic field treatment leads to long-
term non-monotonic transformation of the defect
composition in the near-surface region in the spectral
characteristics of GaAs, InP, GaP, GaN. However, the
processes responsible for this realignment, in particular
for changing the photoluminescence (PL) spectra of
semiconductors, remains uncertain. Therefore,
researches aimed at studying this kind of interactions in
promising semiconductor device structures are required
to determine all the features associated with magnetic-
induced transformations.
2. Experimental
The object under study was the samples of GaN:Si of n-
type conductivity (the concentration of charge carriers
was ~1.610
19
cm
–3
) with the thickness ~2.2 μm, which
were grown using MOCVD on sapphire substrates. PL
measurements were carried out at room temperature
within the 350–650-nm wavelength range using a
Perkin-Elmer LS55 PL spectrometer with an error below
0.5 nm. A source of excitation was light with the
wavelength = 315 nm. WMF treatment (B = 60 mT)
was chosen for our experiments, with duration of
processing 1 (sample 1), 3 (sample 2) and 8 min
(sample 3). The initial sample (i.e., not subjected to
WMF treatment) served as the reference one.
3. Results and discussions
Fig. 1 shows evolution of PL spectra of these structures
after treatment in WMF for 1, 3 and 8 min, respectively.
It can be seen that the initial spectra of semiconductor
material contain the narrow band in the short-wave
region at 363.6 nm, which is associated with interband
transitions of free charge carriers (~3.417 eV), and the
wide, so-called yellow impurity band in the long-wave
region near 550 nm. With regard to the nature of the
latter band, the data in the literature differ. Some authors
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 1. P. 71-73.
doi: 10.15407/ spqeo18.01.071
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
72
attribute the nature of this wide band to interference [4]
associated with purely geometric effect of spreading the
beams in a studied structure. However, in our view, it is
advisable to relate with certain radiative transitions
involving impurity centers to the energy levels located
closely to each other in the forbidden band, as in the
work [5].
0
200
400
600
800
1000
initial
1 day
2 day
5 day
7 day
9 day
12 day
15 day
23 day
29 day
asample 1
0
200
400
600
800
1000
P
L
i
n
te
n
s
it
y
,
a
rb
.u
n
it
s
initial
1 day
2 day
5 day
7 day
9 day
12 day
15 day
23 day
29 day
b
sample 2
350 400 450 500 550
0
200
400
600
800
1000
Wavelength, nm
initial
1 day
2 day
5 day
7 day
9 day
12 day
15 day
23 day
29 day
c
sample 3
Fig. 1. Evolution of PL spectra of GaN:Si caused by WMF
treatment for 1 (a), 3 (b) and 8 min (c), respectively.
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
3.34
3.36
3.38
3.40
3.42
3.44
3.46
h
v
,
e
V
Time, days
sample 1
sample 2
sample 3
Fig. 2. Frequency positions of the edge peak as a function of
time passing after the WMF treatment.
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
N
o
rm
a
liz
e
d
i
n
te
n
s
it
y
,
I/
I 0
Time, days
sample 1
sample 2
sample 3
Fig. 3. Variations of edge peak intensity as a function of time
passing after the WMF treatment.
Since the nature of the wide long-wave band is not
completely clear, we analyzed only the peak of edge PL.
WMF treatment of the samples has led to the PL spectra
transformation manifested in the change of intensity of
the bands, which was observed in the experiment, and in
the case of the longest treatment, in addition, the
frequency shift of the edge peak to the short-wave
region. Figs. 2 and 3 show the dependences of frequency
position and normalized intensity of the peak at
363.6 nm on the time elapsed after the WMF treatment.
It is seen that the nonmonotonic change in the peak
intensity for all the modes of treatment lasts for about 30
days and eventually becomes close to the reference
value. In this case, the “amplitudes” of deviations from
the original intensity as a whole increase with increasing
duration of treatment and suggest a temporary
weakening of radiative recombination. That is, the
maximum mean-square deviations of the edge PL
intensity from the initial value are ~5%, ~15%, ~22% for
the WMF-treated samples for 1, 3 and 8 min (Fig. 3),
respectively. Regarding the frequency position of edge
PL peaks, the following feature was revealed. For
samples subjected to the treatment for 1 and 3 min, the
frequency change of the studied peak did not exceed the
experimental error. However, for the sample after the
longest treatment (8 min), irreversible shift of the band-
to-band peak by ~12.5 meV was found.
It should be noted that the magneto-induced shift of
the spectral curves related with interband transitions
were previously observed when studying the optical
transmission spectra for Hg1–xCdxTe [6], the reflectance
spectra of epitaxial structures based on GaAs [7]. The
physical nature of this phenomenon is not fully clarified.
The authors of [6] associate this effect with the
appearance of additional force of pressure on the film
from the side of substrate, resulting in a change in the
lattice parameter, which in turn leads to the transfor-
mation of the spectral curves. However, in [8] it was
recorded the magneto-induced change of interatomic
distance in classical semiconductors without substrates,
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 1. P. 71-73.
doi: 10.15407/ spqeo18.01.071
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
73
however it had the temporary character. One can assume
that the presence of the substrate leads to a significant
prolongation of duration of magneto-induced change in
the lattice parameter. The authors of the work [8]
associated the temporary (600…700 s) change of inter-
atomic distance with the magnetic stimulated generation
of clusters of the Frenkel defects with an abnormally low
energy of formation. It is probable that in our experi-
ments a similar effect takes place. Although, it is re-
corded without using the spectra of optical transmission
or reflection, as in [6, 7], but with the photolumi-
nescence technique. It is known that the peak position of
edge radiation of semiconductors essentially depends on
the availability of internal mechanical stresses in the
studied system [9, 10]. Therefore, it is evident that WMF
treatment changed the state of mechanical stresses in the
inves-tigated near-surface layer of GaN. Effects related
to phenomena of this type are known [11].
Possible physical mechanisms of interaction of
WMF with solids that were analyzed in [12-15], they is
quite reasonable to interpret the experimental results, in
particular the model of spin-selective nanoreactor [15] is
the most attractive in this case, since changes in the values
of internal mechanical stresses have obviously to reflect
on changing the microhardness of material under study.
One can assume that WMF induced decomposition of
metastable impurity-defect complexes leads to rapidly
diffusing point defects. The latter move to the natural
drains (for example, surface of semiconductor) and may
take place in modification of the impurity-defect state,
changing the state of internal mechanical stresses, which
are reflected in the PL spectra.
4. Conclusions
Thus, it has been investigated transformation of PL
spectra of the structures GaN:Si with time as a
consequence of WMF treatment. Evolution processes of
migration of decomposition products of metastable
defect complexes existing at the interface film-substrate
leads to restructuring in the near-surface region of
gallium nitride. The latter, in its turn, reflect on trans-
formation of the PL spectra. Realignment of the impurity
“yellow” band of radiative recombination due to the
influence of WMF as well as ascertainment of the
detailed and sequential picture of the energy interaction
of WMF with semiconductor material require further
studying the phenomena of this type.
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