About self-activated orange emission in ZnO

Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obta...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2015
Main Authors: Markevich, I.V., Stara, T.R., Bondarenko, V.O.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120723
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 134-137. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.
ISSN:1560-8034