Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Authors: Syngayivska, G.I., Korotyeyev, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120729
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN / G.I. Syngayivska, V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 79-85. — Бібліогр.: 28 назв. — англ.

High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution function, the field dependences of the ohmic and Hall components of the drift veloc...