Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor f...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120731 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
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Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. 2017-06-12T18:12:03Z 2017-06-12T18:12:03Z 2015 Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.144 PACS 73.40.Cg https://nasplib.isofts.kiev.ua/handle/123456789/120731 Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| spellingShingle |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| title_short |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_fullStr |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full_unstemmed |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_sort |
methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| author |
Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| author_facet |
Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120731 |
| citation_txt |
Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-12-07T17:00:13Z |
| last_indexed |
2025-12-07T17:00:13Z |
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