Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors
Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor f...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120731 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706641937367040 |
|---|---|
| author | Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| author_facet | Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| citation_txt | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution
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| first_indexed | 2025-12-07T17:00:13Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120731 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:00:13Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. 2017-06-12T18:12:03Z 2017-06-12T18:12:03Z 2015 Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.144 PACS 73.40.Cg https://nasplib.isofts.kiev.ua/handle/123456789/120731 Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Article published earlier |
| spellingShingle | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors Slipokurov, V.S. Dub, M.M. Tkachenko, A.K. Kudryk, Ya.Ya. |
| title | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_fullStr | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_full_unstemmed | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_short | Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| title_sort | methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120731 |
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