On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations
Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as destructionpolymerization
 transformations. Two types of experimental measurin...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120732 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations / M.V. Shpotyuk, M.M. Vakiv, O.I. Shpotyuk, S.B. Ubizskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 90-96. — Бібліогр.: 45 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862639404563038208 |
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| author | Shpotyuk, M.V. Vakiv, M.M Shpotyuk, O.I Ubizskii, S.B. |
| author_facet | Shpotyuk, M.V. Vakiv, M.M Shpotyuk, O.I Ubizskii, S.B. |
| citation_txt | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations / M.V. Shpotyuk, M.M. Vakiv, O.I. Shpotyuk, S.B. Ubizskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 90-96. — Бібліогр.: 45 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as destructionpolymerization
transformations. Two types of experimental measuring protocols can be used to study radiation-induced effects within ex-situ direct or in-situ backward measuring chronology, the latter being more adequate for correct separated testing of competitive inputs from both channels of destruction-polymerization transformations. Critical assessment is given on speculations trying to ignore intrinsic radiation-structural transformations in As₂S₃ glass in view of accompanying oxidation processes. In final, this glass is nominated as the best model object among wide group of vitreous chalcogenide semiconductors revealing the highest sensitivity to radiation-induced metastability.
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| first_indexed | 2025-12-01T01:11:40Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120732 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T01:11:40Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shpotyuk, M.V. Vakiv, M.M Shpotyuk, O.I Ubizskii, S.B. 2017-06-12T18:12:55Z 2017-06-12T18:12:55Z 2015 On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations / M.V. Shpotyuk, M.M. Vakiv, O.I. Shpotyuk, S.B. Ubizskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 90-96. — Бібліогр.: 45 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.090 PACS 61.43.Fs, 61.80.Ed, 78.20.-e https://nasplib.isofts.kiev.ua/handle/123456789/120732 Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as destructionpolymerization
 transformations. Two types of experimental measuring protocols can be used to study radiation-induced effects within ex-situ direct or in-situ backward measuring chronology, the latter being more adequate for correct separated testing of competitive inputs from both channels of destruction-polymerization transformations. Critical assessment is given on speculations trying to ignore intrinsic radiation-structural transformations in As₂S₃ glass in view of accompanying oxidation processes. In final, this glass is nominated as the best model object among wide group of vitreous chalcogenide semiconductors revealing the highest sensitivity to radiation-induced metastability. The authors appreciate acknowledgement for As₂S₃ samples described by T. Kavetskyy in [10], while are forced to declare that such samples were never provided to him within joint projects. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations Article published earlier |
| spellingShingle | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations Shpotyuk, M.V. Vakiv, M.M Shpotyuk, O.I Ubizskii, S.B. |
| title | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations |
| title_full | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations |
| title_fullStr | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations |
| title_full_unstemmed | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations |
| title_short | On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations |
| title_sort | on the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: the role of intrinsic and impurity-related destruction-polymerization transformations |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120732 |
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