Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure
A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume technique through a graded-gap CdSexTe₁₋x interlayer. A multilayer p-Cu₁.₈S/n-CdT...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120736 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure / Yu.N. Bobrenko, S.Yu. Pavelets, T.V. Semikina, O.A. Stadnyk, G.I. Sheremetova, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 101-105. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120736 |
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Bobrenko, Yu.N. Pavelets, S.Yu. Semikina, T.V. Stadnyk, O.A. Sheremetova, G.I. Yaroshenko, M.V. 2017-06-12T18:18:28Z 2017-06-12T18:18:28Z 2015 Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure / Yu.N. Bobrenko, S.Yu. Pavelets, T.V. Semikina, O.A. Stadnyk, G.I. Sheremetova, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 101-105. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.101 PACS 73.20.At, 73.40.Kp, 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/120736 A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume technique through a graded-gap CdSexTe₁₋x interlayer. A multilayer p-Cu₁.₈S/n-CdTe/n-CdSe/Мо structure was prepared. It makes it possible to increase the degree of structural perfection of thin photosensitive n-CdTe layers without application of additional high-temperature treatments, as well as to obtain an ohmic back contact without some additional doping of CdTe. The quantum efficiency spectra and critical parameters of solar converters have been presented. The prospects for application of polycrystalline n-CdTe in solar power engineering have been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure |
| spellingShingle |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure Bobrenko, Yu.N. Pavelets, S.Yu. Semikina, T.V. Stadnyk, O.A. Sheremetova, G.I. Yaroshenko, M.V. |
| title_short |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure |
| title_full |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure |
| title_fullStr |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure |
| title_full_unstemmed |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure |
| title_sort |
thin-film solar converters based on the p-cu₁.₈s/n-cdte surface-barrier structure |
| author |
Bobrenko, Yu.N. Pavelets, S.Yu. Semikina, T.V. Stadnyk, O.A. Sheremetova, G.I. Yaroshenko, M.V. |
| author_facet |
Bobrenko, Yu.N. Pavelets, S.Yu. Semikina, T.V. Stadnyk, O.A. Sheremetova, G.I. Yaroshenko, M.V. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume technique through a graded-gap CdSexTe₁₋x interlayer. A multilayer p-Cu₁.₈S/n-CdTe/n-CdSe/Мо structure was prepared. It makes it possible to increase the degree of structural perfection of thin photosensitive n-CdTe layers without application of additional high-temperature treatments, as well as to obtain an ohmic back contact without some additional doping of CdTe. The quantum efficiency spectra and critical parameters of solar converters have been presented. The prospects for application of polycrystalline n-CdTe in solar power engineering have been discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120736 |
| citation_txt |
Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure / Yu.N. Bobrenko, S.Yu. Pavelets, T.V. Semikina, O.A. Stadnyk, G.I. Sheremetova, M.V. Yaroshenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 101-105. — Бібліогр.: 15 назв. — англ. |
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