Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Author: Vertsimakha, G.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120738
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 110-114. — Бібліогр.: 13 назв. — англ.

Effects of the presence of isolated disordered layers on the exciton scattering by compositional fluctuations in double semiconductor quantum wells have been studied. In the structures containing both ordered and disordered layers, the probability of the scattering depends on the degree of the excit...