Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2013
• Hauptverfasser: Boichuk, V.I., Bilynskyi, I.V., Sokolnyk, O.A., Shakleina, I.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2013
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120837
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption / V.I. Boichuk, I.V. Bilynskyi, O.A. Sokolnyk, I.O. Shakleina // Condensed Matter Physics. — 2013. — Т. 16, № 3. — С. 33702:1-10. — Бібліогр.: 21 назв. — англ.

The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix. Calculations have been carried out in perturbation theory taking into...