Influence of low-temperature annealing on the state of CdTe surface

Influence of low-temperature annealing on the state of CdTe surface

Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation a...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2005
Main Authors: Parfenyuk, O.A., Ilashchuk, M.I., Chupyra, S.M., Burachek, V.R., Korbutyak, D.V., Krylyuk, S.G., Vakhnyak, N.D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120961
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120961
record_format dspace
spelling Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
2017-06-13T11:11:40Z
2017-06-13T11:11:40Z
2005
Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS: 72.80.Ey, 78.55.Et, 81.40.Rs, 81.40T
https://nasplib.isofts.kiev.ua/handle/123456789/120961
Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of low-temperature annealing on the state of CdTe surface
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of low-temperature annealing on the state of CdTe surface
spellingShingle Influence of low-temperature annealing on the state of CdTe surface
Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
title_short Influence of low-temperature annealing on the state of CdTe surface
title_full Influence of low-temperature annealing on the state of CdTe surface
title_fullStr Influence of low-temperature annealing on the state of CdTe surface
title_full_unstemmed Influence of low-temperature annealing on the state of CdTe surface
title_sort influence of low-temperature annealing on the state of cdte surface
author Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
author_facet Parfenyuk, O.A.
Ilashchuk, M.I.
Chupyra, S.M.
Burachek, V.R.
Korbutyak, D.V.
Krylyuk, S.G.
Vakhnyak, N.D.
publishDate 2005
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/120961
citation_txt Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.
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AT korbutyakdv influenceoflowtemperatureannealingonthestateofcdtesurface
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first_indexed 2025-12-07T16:54:59Z
last_indexed 2025-12-07T16:54:59Z
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