Influence of low-temperature annealing on the state of CdTe surface
Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation a...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120961 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862705756484141056 |
|---|---|
| author | Parfenyuk, O.A. Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. |
| author_facet | Parfenyuk, O.A. Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. |
| citation_txt | Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.
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| first_indexed | 2025-12-07T16:54:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120961 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:54:59Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Parfenyuk, O.A. Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. 2017-06-13T11:11:40Z 2017-06-13T11:11:40Z 2005 Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 72.80.Ey, 78.55.Et, 81.40.Rs, 81.40T https://nasplib.isofts.kiev.ua/handle/123456789/120961 Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of low-temperature annealing on the state of CdTe surface Article published earlier |
| spellingShingle | Influence of low-temperature annealing on the state of CdTe surface Parfenyuk, O.A. Ilashchuk, M.I. Chupyra, S.M. Burachek, V.R. Korbutyak, D.V. Krylyuk, S.G. Vakhnyak, N.D. |
| title | Influence of low-temperature annealing on the state of CdTe surface |
| title_full | Influence of low-temperature annealing on the state of CdTe surface |
| title_fullStr | Influence of low-temperature annealing on the state of CdTe surface |
| title_full_unstemmed | Influence of low-temperature annealing on the state of CdTe surface |
| title_short | Influence of low-temperature annealing on the state of CdTe surface |
| title_sort | influence of low-temperature annealing on the state of cdte surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120961 |
| work_keys_str_mv | AT parfenyukoa influenceoflowtemperatureannealingonthestateofcdtesurface AT ilashchukmi influenceoflowtemperatureannealingonthestateofcdtesurface AT chupyrasm influenceoflowtemperatureannealingonthestateofcdtesurface AT burachekvr influenceoflowtemperatureannealingonthestateofcdtesurface AT korbutyakdv influenceoflowtemperatureannealingonthestateofcdtesurface AT krylyuksg influenceoflowtemperatureannealingonthestateofcdtesurface AT vakhnyaknd influenceoflowtemperatureannealingonthestateofcdtesurface |