Influence of low-temperature annealing on the state of CdTe surface

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Parfenyuk, O.A., Ilashchuk, M.I., Chupyra, S.M., Burachek, V.R., Korbutyak, D.V., Krylyuk, S.G., Vakhnyak, N.D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120961
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ.

Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation a...