Dielectric relaxation in Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅ chalcogenide glasses
Temperature and frequency dependence of dielectric constant (ε') and dielectric loss (ε") are studied in glassy Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅. The measurements have been made in the frequency range (1 to 10 kHz) and in the temperature range 300 to 395 K. No dielectric dispersion is observed in...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | Dwivedi, A., Arora, R., Mehta, N., Choudhary, N., Kumar, A. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120963 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dielectric relaxation in Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅ chalcogenide glasses / A. Dwivedi, R. Arora, N. Mehta, N. Choudhary, A. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 45-49. — Бібліогр.: 34 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
by: Halyan, V.V., et al.
Published: (2009)
by: Halyan, V.V., et al.
Published: (2009)
Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys
by: Halyan, V.V., et al.
Published: (2003)
by: Halyan, V.V., et al.
Published: (2003)
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
by: M. Vakiv, et al.
Published: (2012)
by: M. Vakiv, et al.
Published: (2012)
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
by: Vakiv, M., et al.
Published: (2012)
by: Vakiv, M., et al.
Published: (2012)
THERMODYNAMICALLY STABLE PHASES OF THE Ag9GaSe6 – Ag8GeSe6 SYSTEM AT T
by: Moroz, Mykola, et al.
Published: (2022)
by: Moroz, Mykola, et al.
Published: (2022)
Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
by: P. M. Lytvyn, et al.
Published: (2018)
by: P. M. Lytvyn, et al.
Published: (2018)
Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
by: Lytvyn, P.M., et al.
Published: (2018)
by: Lytvyn, P.M., et al.
Published: (2018)
Structural properties of chalcogenide glasses As₂Se₃ doped with manganese
by: Paiuk, O.P., et al.
Published: (2016)
by: Paiuk, O.P., et al.
Published: (2016)
Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses
by: Malesh, V.I., et al.
Published: (2002)
by: Malesh, V.I., et al.
Published: (2002)
Photoalignment of liquid crystals on chalcogenide glass As20Se80 surface
by: N. Boyarchuk, et al.
Published: (2012)
by: N. Boyarchuk, et al.
Published: (2012)
Photoalignment of liquid crystals on chalcogenide glass As20Se80 surface
by: N. Boyarchuk, et al.
Published: (2012)
by: N. Boyarchuk, et al.
Published: (2012)
Structural properties of chalcogenide glasses As2Se3 doped with manganese
by: O. P. Paiuk, et al.
Published: (2016)
by: O. P. Paiuk, et al.
Published: (2016)
Electrical and optical properties of AgGaGe2S2Se4 single crystals
by: G. L. Myronchuk, et al.
Published: (2012)
by: G. L. Myronchuk, et al.
Published: (2012)
Electrical and optical properties of AgGaGe2S2Se4 single crystals
by: H. L. Myronchuk, et al.
Published: (2012)
by: H. L. Myronchuk, et al.
Published: (2012)
Електричні і оптичні властивості монокристалів AgGaGe2S2Se4
by: Myronchuk, G.L., et al.
Published: (2021)
by: Myronchuk, G.L., et al.
Published: (2021)
Система Tl₂GeSe₃—Tl₄GeₓSn₁₋ₓSe₄ —Tl₂SnSe₃
by: Барчій, І.Є., et al.
Published: (2006)
by: Барчій, І.Є., et al.
Published: (2006)
Optical properties and structure of As-Ge-Se thin films
by: I. D. Tolmachov, et al.
Published: (2010)
by: I. D. Tolmachov, et al.
Published: (2010)
Optical properties and structure of As-Ge-Se thin films
by: Tolmachov, I.D., et al.
Published: (2010)
by: Tolmachov, I.D., et al.
Published: (2010)
Influence the cationic substitution in AgGaGe₃Se₈ on the electro-optical, IR optical and nonlinear properties
by: Krymus, A.S., et al.
Published: (2017)
by: Krymus, A.S., et al.
Published: (2017)
Structure and electrical resistance of the passivating ZnSe layer on Ge
by: Maslov, V.P., et al.
Published: (2021)
by: Maslov, V.P., et al.
Published: (2021)
Influence of Cu-, Sn-, and In-doping on optical properties of AgGaGe3 Se8 single crystals
by: A. S. Krymus, et al.
Published: (2016)
by: A. S. Krymus, et al.
Published: (2016)
Influence of Cu-, Sn-, and In-doping on optical properties of AgGaGe3 Se8 single crystals
by: A. S. Krymus, et al.
Published: (2016)
by: A. S. Krymus, et al.
Published: (2016)
Thermodynamic properties of the AgGaGe3Se8 compound at T≤500 K determined by the emf method
by: M. Moroz, et al.
Published: (2022)
by: M. Moroz, et al.
Published: (2022)
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
by: Kavetskyy, T.S.
Published: (2013)
by: Kavetskyy, T.S.
Published: (2013)
Crystallization kinetics of Ge₂₂Sb₂₂Tе₅₆ doped with Se and Ni
by: Garsia-Garsia, E., et al.
Published: (1998)
by: Garsia-Garsia, E., et al.
Published: (1998)
Electronic structure of Ag₈GeS₆
by: Bletskan, D.I., et al.
Published: (2017)
by: Bletskan, D.I., et al.
Published: (2017)
Role of Sb additive in the dielectric properties of f Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys
by: Sharma, J., et al.
Published: (2011)
by: Sharma, J., et al.
Published: (2011)
Электрические свойства халькогенидов AgGeAsS₃xSe₃₍₁₋x₎(0,1<=x<=0,9)
by: Хейфец, О.Л., et al.
Published: (2007)
by: Хейфец, О.Л., et al.
Published: (2007)
Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices
by: Kostyukevych, S.A., et al.
Published: (2001)
by: Kostyukevych, S.A., et al.
Published: (2001)
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
by: H. H. Amer, et al.
Published: (2011)
by: H. H. Amer, et al.
Published: (2011)
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
by: Amer, H.H., et al.
Published: (2011)
by: Amer, H.H., et al.
Published: (2011)
Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption
by: Bozhko, V.V., et al.
Published: (2002)
by: Bozhko, V.V., et al.
Published: (2002)
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
by: S. A. Iliash, et al.
Published: (2017)
by: S. A. Iliash, et al.
Published: (2017)
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films
by: Iliash, S.A., et al.
Published: (2017)
by: Iliash, S.A., et al.
Published: (2017)
Electrical and dielectrical properties of composites based on (Ag₁₋ₓCuₓ)₇GeS₅I mixed crystals
by: Izai, V.Yu., et al.
Published: (2018)
by: Izai, V.Yu., et al.
Published: (2018)
Optical Recording of Micro- and Nano- Relief Structures on Inorganic Resists Ge-Se
by: Indutny, I. Z., et al.
Published: (2013)
by: Indutny, I. Z., et al.
Published: (2013)
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
by: V. M. Rubish, et al.
Published: (2013)
by: V. M. Rubish, et al.
Published: (2013)
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
by: Rubish, V.M., et al.
Published: (2013)
by: Rubish, V.M., et al.
Published: (2013)
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅
by: Kondrat, O., et al.
Published: (2004)
by: Kondrat, O., et al.
Published: (2004)
Photostimulated reversible changes in the Ge-Se films as a base of resistive process
by: I. V. Babiichuk, et al.
Published: (2014)
by: I. V. Babiichuk, et al.
Published: (2014)
Similar Items
-
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
by: Halyan, V.V., et al.
Published: (2009) -
Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys
by: Halyan, V.V., et al.
Published: (2003) -
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
by: M. Vakiv, et al.
Published: (2012) -
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
by: Vakiv, M., et al.
Published: (2012) -
THERMODYNAMICALLY STABLE PHASES OF THE Ag9GaSe6 – Ag8GeSe6 SYSTEM AT T
by: Moroz, Mykola, et al.
Published: (2022)