Analysis of luminescence method for determination of Cd₁₋xZnxTe composition

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Glinchuk, K.D., Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120964
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Analysis of luminescence method for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 39-44. — Бібліогр.: 18 назв. — англ.

A detailed analysis of the method for determination of Cd₁₋xZnxTe composition x from measurements of 4.2 K peak position of the emission band induced by annihilation of excitons bound with neutral shallow acceptors is given. Found are the conditions fulfillment of which permits to obtain reliable x...