Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x
Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120965 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x / B. Sapaev, A.S. Saidov, I.B. Sapaev, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 16-18. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x(ZnS)x consist of a wide band with the peak within the range of 505 to 520 nm. The Raman scattering shows that approximately 19 % of silicon located directly under the epitaxial film is in amorphous phase.
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| ISSN: | 1560-8034 |