Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x
Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120965 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x / B. Sapaev, A.S. Saidov, I.B. Sapaev, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 16-18. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120965 |
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Sapaev, B. Saidov, A.S. Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Dmitruk, I.N. Galak, N.P. Sapaev, I.B. 2017-06-13T11:19:24Z 2017-06-13T11:19:24Z 2005 Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x / B. Sapaev, A.S. Saidov, I.B. Sapaev, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 16-18. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS:78.70.Fy, 78.70.Gg https://nasplib.isofts.kiev.ua/handle/123456789/120965 Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x(ZnS)x consist of a wide band with the peak within the range of 505 to 520 nm. The Raman scattering shows that approximately 19 % of silicon located directly under the epitaxial film is in amorphous phase. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x |
| spellingShingle |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x Sapaev, B. Saidov, A.S. Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Dmitruk, I.N. Galak, N.P. Sapaev, I.B. |
| title_short |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x |
| title_full |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x |
| title_fullStr |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x |
| title_full_unstemmed |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x |
| title_sort |
spectroscopy of the solid solutions (si₂)₁₋x(zns)x |
| author |
Sapaev, B. Saidov, A.S. Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Dmitruk, I.N. Galak, N.P. Sapaev, I.B. |
| author_facet |
Sapaev, B. Saidov, A.S. Bacherikov, Yu.Yu. Konakova, R.V. Okhrimenko, O.B. Dmitruk, I.N. Galak, N.P. Sapaev, I.B. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si₂)₁₋x(ZnS)x consist of a wide band with the peak within the range of 505 to 520 nm. The Raman scattering shows that approximately 19 % of silicon located directly under the epitaxial film is in amorphous phase.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120965 |
| citation_txt |
Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x / B. Sapaev, A.S. Saidov, I.B. Sapaev, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 16-18. — Бібліогр.: 15 назв. — англ. |
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2025-12-07T20:23:00Z |
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