Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evap...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2005 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120966 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862747937975566336 |
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| author | Semikina, T.V. |
| author_facet | Semikina, T.V. |
| citation_txt | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evaporation rate increase allows to enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess an amorphous structure with a small amount of nanocrystalline inclusions. The formation of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly pronounced at 650, 890 and 2125 сm⁻¹ in the IR spectrum or yttrium impurities. The ellipsometry results show that α-Si:Y films have the high absorption coefficient, refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0 to 1.17 eV when the substrate temperature increases (140 to 300 °С).
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| first_indexed | 2025-12-07T20:53:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120966 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:53:03Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Semikina, T.V. 2017-06-13T11:21:04Z 2017-06-13T11:21:04Z 2005 Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 68.55.-a, 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/120966 This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evaporation rate increase allows to enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess an amorphous structure with a small amount of nanocrystalline inclusions. The formation of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly pronounced at 650, 890 and 2125 сm⁻¹ in the IR spectrum or yttrium impurities. The ellipsometry results show that α-Si:Y films have the high absorption coefficient, refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0 to 1.17 eV when the substrate temperature increases (140 to 300 °С). The author would like to thank to Dr. A. N. Smyryeva
 and M. G. Dusheyko (NTUU “KPI”, Kiev, Ukraine) for
 sample preparation, to Prof. V.G. Litovchenko (Institute
 of Semiconductor Physics, Kiev, Ukraine) for assistance
 in interpretation of the IR spectra, M. Rommel (TU
 Erlangen-Nurenberg, Germany) for AFM measurements,
 Prof. D. Zahn and Dr. M. Friedrich (TU Chemnitz,
 Germany) for their help in simulation of calculations
 after ellipsometric measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method Article published earlier |
| spellingShingle | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method Semikina, T.V. |
| title | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_full | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_fullStr | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_full_unstemmed | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_short | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_sort | morphology and optical properties of α-si:y films, obtained by electron-beam evaporation method |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120966 |
| work_keys_str_mv | AT semikinatv morphologyandopticalpropertiesofαsiyfilmsobtainedbyelectronbeamevaporationmethod |