Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appeara...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120967 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120967 |
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Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. 2017-06-13T11:21:38Z 2017-06-13T11:21:38Z 2005 Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 62.20.Dc, 81.40.Jj https://nasplib.isofts.kiev.ua/handle/123456789/120967 Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| spellingShingle |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. |
| title_short |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_full |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_fullStr |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_full_unstemmed |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| title_sort |
character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon |
| author |
Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. |
| author_facet |
Gutsulyak, B.I. Oliynych-Lysyuk, A.V. Fodchuk, I.M. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120967 |
| citation_txt |
Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ. |
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