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Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon

Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appeara...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Gutsulyak, B.I., Oliynych-Lysyuk, A.V., Fodchuk, I.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120967
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ.

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