Light absorption by inhomogeneous semiconductor film
Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120971 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Light absorption by inhomogeneous semiconductor film / L. Baraban, V. Lozovski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 66-73. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120971 |
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Baraban, L. Lozovski, V. 2017-06-13T11:33:51Z 2017-06-13T11:33:51Z 2005 Light absorption by inhomogeneous semiconductor film / L. Baraban, V. Lozovski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 66-73. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS: 78.20.Bh, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/120971 Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and dissipative function of inhomogeneous in thickness semiconductor film were calculated. The absorption spectra are numerically calculated as a function of the frequency and angle of incidence. It was obtain that light absorption spectra are strongly dependent on profile distributions of implanted impurities along the film thickness. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Light absorption by inhomogeneous semiconductor film Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Light absorption by inhomogeneous semiconductor film |
| spellingShingle |
Light absorption by inhomogeneous semiconductor film Baraban, L. Lozovski, V. |
| title_short |
Light absorption by inhomogeneous semiconductor film |
| title_full |
Light absorption by inhomogeneous semiconductor film |
| title_fullStr |
Light absorption by inhomogeneous semiconductor film |
| title_full_unstemmed |
Light absorption by inhomogeneous semiconductor film |
| title_sort |
light absorption by inhomogeneous semiconductor film |
| author |
Baraban, L. Lozovski, V. |
| author_facet |
Baraban, L. Lozovski, V. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and dissipative function of inhomogeneous in thickness semiconductor film were calculated. The absorption spectra are numerically calculated as a function of the frequency and angle of incidence. It was obtain that light absorption spectra are strongly dependent on profile distributions of implanted impurities along the film thickness.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120971 |
| citation_txt |
Light absorption by inhomogeneous semiconductor film / L. Baraban, V. Lozovski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 66-73. — Бібліогр.: 24 назв. — англ. |
| work_keys_str_mv |
AT barabanl lightabsorptionbyinhomogeneoussemiconductorfilm AT lozovskiv lightabsorptionbyinhomogeneoussemiconductorfilm |
| first_indexed |
2025-12-07T20:36:17Z |
| last_indexed |
2025-12-07T20:36:17Z |
| _version_ |
1850883207389511680 |