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Light absorption by inhomogeneous semiconductor film

Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different profiles. The effective susceptibility (response to the external field) and...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2005
Hauptverfasser:	Baraban, L., Lozovski, V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/120971
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Light absorption by inhomogeneous semiconductor film / L. Baraban, V. Lozovski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 66-73. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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