Technology of manufacturing the reliable silicon photoconverters with long operation time
We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data o...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Cite this: | Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ. |
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Guseynov, N.A. Askerov, Sh.Q. Aslanov, Sh.S. Agaev, M.N. Gasanov, M.H. 2017-06-13T11:35:54Z 2017-06-13T11:35:54Z 2005 Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 84.60.Jt https://nasplib.isofts.kiev.ua/handle/123456789/120974 We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al₈₀Ni₂₀ confirming amorphism were obtained. The key PC parameters are determined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Technology of manufacturing the reliable silicon photoconverters with long operation time Article published earlier |
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Technology of manufacturing the reliable silicon photoconverters with long operation time |
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Technology of manufacturing the reliable silicon photoconverters with long operation time Guseynov, N.A. Askerov, Sh.Q. Aslanov, Sh.S. Agaev, M.N. Gasanov, M.H. |
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Technology of manufacturing the reliable silicon photoconverters with long operation time |
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Technology of manufacturing the reliable silicon photoconverters with long operation time |
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Technology of manufacturing the reliable silicon photoconverters with long operation time |
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Technology of manufacturing the reliable silicon photoconverters with long operation time |
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technology of manufacturing the reliable silicon photoconverters with long operation time |
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Guseynov, N.A. Askerov, Sh.Q. Aslanov, Sh.S. Agaev, M.N. Gasanov, M.H. |
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Guseynov, N.A. Askerov, Sh.Q. Aslanov, Sh.S. Agaev, M.N. Gasanov, M.H. |
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2005 |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al₈₀Ni₂₀ confirming amorphism were obtained. The key PC parameters are determined.
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Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ. |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 85-87.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
85
PACS 84.60.Jt
Technology of manufacturing the reliable silicon photoconverters
with long operation time
N.A. Guseynov1, Sh.Q. Askerov1, Sh.S. Aslanov2, M.N. Agaev1, M.H. Gasanov1
1Baku State University
23, Z. Khalilov str., Baku, AZ 1148, Azerbaijan, e-mail: nguseynov@mail.ru
2Institute of Physics of Azerbaijan National Academy of Sciences
33, G. Djavida prospect, Baku, AZ 1143, Azerbaijan
Abstract. We offer to use an amorphous metal alloy Al80Ni20 as ohmic contact and
current-collecting tracks to silicon photoconverters (PC) based on p-n junctions.
Technological processes for production of silicon photosensitive structures and film
coatings with an amorphous structure are described. The data of the X-ray structure
analysis of the metal alloy Al80Ni20 confirming amorphism were obtained. The key PC
parameters are determined.
Keywords: photovoltaic battery, amorphous metal alloy, electron-beam vacuum
evaporation.
Manuscript received 09.06.05; accepted for publication 25.10.05.
1. Introduction
The priority problem facing the modern power
engineering is reduction of the cost to produce the
converted solar energy. It can be achieved by
technological development of their manufacturing, use
of cheaper and new materials, increase reliability of
growth and operating time of photoconverters (PC) [1].
To provide reliable growth of PC, it is necessary to
find the cause resulting in the degradation and to use
various methods for prevention of this degradation.
2. Substantiation of using the material
The reasons of wide application of Al as ohmic contacts
in microelectronics are as follows: the small values of
resistance Rк of the contacts Al/p-Si, a good heat
conductivity, a low cost of the material.
However, the application of the polycrystalline Al in
solar power engineering has several failings. First, Al is
not convenient metal for the assembly of PC in a solar
battery, because it is possible to make the contact to Al
only by welding or thermocompression. In this
connection, it is necessary to deposit other metals, for
example Ag, over Al contact. Second, the resistance Rк
of contacts Al/p-Si increases with increasing the tem-
perature, hence, when operating at higher illumination
levels such ohmic contact is not suitable [2].
There is one more cause of untilizing the polycrystal-
line Al as an ohmic contact.
As known, one of the cause of semiconductor device
degradation is migration of atoms from ohmic contact
material to the semiconductor [2,3].
In polycrystalline metal, transport ways for migrating
atoms are grain boundaries and various defects
(dislocations, vacancies, etc.). To prevent atomic
migration, perspective is the use of relaxed amorphous
metal alloys in which there are neither grain boundaries,
nor dislocations that are inherent to the crystalline state.
In this case, the structure is homogeneous and, as a
consequence, the diffusion is strongly slowed down [4].
In this work, investigated is the opportunity of
application of the metal film Al80Ni20 with amorphous
structure as ohmic contacts and current-collecting tracks
when manufacturing the solar batteries [5]. Charac-
teristic feature of this film production is a comparative
technological simplicity of tinning in assembly
processes, which plays an important role as it excludes
the use of such expensive metals as gold, silver, etc.
The finished PC structure is shown in Fig. 1.
3. Technology for production of photoconverters
To obtain the shallow diffusion n+ and p+ areas, the
industrial plant DOM-3 was used.
The temperature of an operating reactor zone was
950 oC; N2, O2 were used as technological gases. PCl3
was a source of phosphorus. The 280-μm thick plates of
monocrystalline silicon SHB-10 (111) were applied as
substrates. The value of substrate specific resistance
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 85-87.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
86
Fig. 1. Photoconverter structure.
1 – the antireflection coating – phosphorsilicate glass; 2 –
n+-Si:(P) (ND = 1·1020 cm3); 3 – p-Si SHB10 (111)
(NA = 1·1016 cm3); 4 – p+-Si:(B) (NA = 1·1017 cm3); 5 – the
ohmic contact made from the amorphous metal alloy Al80Ni20.
averaged 9 Ω·cm that corresponded to the value of the
impurity concentration of 1·1016 cm3. The process for
producing the PC before the ohmic contact coating was
presented by the following basic technological
operations.
1. Chemical treatment (peroxide of ammoniac
solutions).
2. Oxidation (Т = 1050 °С, O2, N2, H2O+Cl).
3. SiO2 disposal from the backside (H2O:HF).
4. Chemical treatment (peroxide of ammoniac
solutions).
5. Boron diffusion (BBr3).
6. SiO2 disposal from the front side (H2O:HF).
7. Chemical treatment (peroxide of ammoniac
solutions).
8. Phosphorus diffusion (PCl3).
Before ohmic metallization, the photosensitive
structures were separated into three groups. Then, the
polycrystalline Al film was evaporated onto the
structures of the first group, the film of polycrystalline
Ni – onto those of the second one, and the amorphous
metal alloy Al80Ni20 film – onto those of the third one.
Process of metallization of structures has several
consecutive operations:
1. Photolithography (opening the windows on the front
side).
2. Chemical treatment (peroxide of ammoniac
solutions).
3. Metal film evaporation onto the front side.
4. Photolithography on the metal.
5. Metal film evaporation onto the backside.
Finally, on the front side of structure we obtained the
pattern with the identical step, and on the backside – the
continuous layer of the metal contact.
Using the made structures, we have determined:
– type of the diffusion layer conductivity;
– thickness of n+ area dn;
– specific surface resistivity of substrates Rss and
diffusion layers Rsdl;
– specific bulk resistivity of substrates ρvs and
diffusion layers ρvdl;
– impurity concentration N;
– short-circuit current Isc and open-circuit voltage Uop.
The value dp-n was determined by the method
spherical joint in several "points" of the structure at the
interface using a microscope.
Rss and Rsdl was measured using the 4-probe method
[5].
The values ρvs and ρvdl were calculated by the
formula:
ρvdl = Rsd,
where d is the thickness of a substrate or diffusion layer.
The value N was determined from the experimentally
measured dependences of specific resistance on the
impurity concentration in n-type silicon doped by
phosphorus [6].
The values Isc and Uop were determined from the load
voltage-current characteristics.
The obtained results are shown in Table 1.
Table 1.
4. Method for producing the amorphous metal films
The industrial plant "ORATORIO-9" was used for
evaporation of the amorphous alloy Al-Ni films by the
vacuum electron-beam evaporation method. The
conditions of evaporation were chosen in such manner
that the film structure was corresponded to the alloy
Al80Ni20 .
Conditions for obtaining the necessary concentration
ratio are summarized in Table 2.
Table 2.
Operating vacuum P = 5·10-5 mm Hg
Substrate temperature Т = 250 °С
Evaporation current of Al IAl = 12 μA
Evaporation current of Ni INi = 2.2 μA
Evaporation time t = 300 s
Film thickness dAlNi = 0.5 μm
5. The structural analysis of Al, Ti, Al80Ni20 films
To identify the structure of metal films after evaporation,
the X-ray structural analysis has been carried out using
the diffractometer DRON-2.
In Fig. 2 shown are the X-ray diffraction rocking
curves obtained for the pure polycrystalline Al, Ni, and
Al80Ni20 films. A primary beam (λ =1.54 Å) was
Parameter
Structure
Isc,
mA
Uop,
V
Rsp+,
Ω· cm
Rsn+,
Ω· cm
ρvp+,
μΩ
ρvn+,
μ Ω
I group (Al) 22 5.2 140 40 700 12
II group
(Ni)
19.5 4.9 140 40 700 12
III group
(Al80Ni20)
21 5.1 140 40 700 12
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 85-87.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
87
Fig. 2. X-ray structure analysis films Al (a), Ni (b) и Al80Ni20 (c).
monochromated by a pyrolitic graphite crystal. As may
be seen from the X-ray photographs for aluminium and
nickel films, the interference maximuma observed (Figs
2a and b) are characteristic for the polycrystalline films
of pure metals.
In the case of Al80Ni20, diffraction peaks are strongly
smoothed, that is evident of film amorphism (Fig. 2с).
For confirmation of this conclusion, the electron-
microscopical analysis have been carried out [7].
6. Results
The silicon PC based on p-n junction with Al80Ni20
ohmic contact made in 1987 reduces its efficiency less
than by 10 % after 17 years of service, the one with
polycrystalline metal ohmic contact reducing the
efficiency more than by 20 %. This fact testifies
reliability and long operation time of solar batteries
proposed by us.
7. Conclusions
Thus, we can conclude that the use of Al80Ni20 ohmic
contacts, first, raises the stability and reliability, second,
increases the service life of solar batteries, and, thirdly,
lowers the cost of converted solar energy production.
References
1. V.L. Avgustinov, T.N. Belousova, Modern status of
energy photoconversion by using silicon solar
elements // Optoelectronics and Semiconductor
Technics, 30, p. 120-154 (1995) (in Russian).
2. V.I. Striha, S.S. Kilchinskaya, Solar elements based
on contact the metal – semiconductor, Kyiv, Nau-
kova dumka (1992) (in Russian).
3. V.R. Zayavlin, Temperature degradation of the solar
photovoltaic array // Solar Eng., N5, p. 3-17(1999).
4. I.V. Zolotukhin, Y.E. Kalinin, Amorphous metallic
alloys // Uspekhi Fiz. Nauk, 160, N9, p.75-100
(1990) (in Russian).
5. Sh.Q. Askerov, M.N. Agaev, M.H. Hasanov,
V.A. Orujov, N.A. Guseynov, Solar cell on the basis
of p-n junction from p-Si with metallization from
amorphous metallic alloy Al80Ni20 // Transactions of
Azerbaijan National Academy of Sciences, XXIII,
N5(II), p.66-69 (2003).
6. L.P. Pavlov, Methods of determination of key
parameters of semiconduction materials, Visshaya
shkola, Moscow (1975) (in Russian).
7. I.G. Pashaev, Ph.D. thesis (1990).
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