Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distil...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2005 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120976 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862729741432258560 |
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| author | Koval'chuk, A.V. Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. |
| author_facet | Koval'chuk, A.V. Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. |
| citation_txt | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness.
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| first_indexed | 2025-12-07T19:17:06Z |
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| id | nasplib_isofts_kiev_ua-123456789-120976 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:17:06Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Koval'chuk, A.V. Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. 2017-06-13T11:43:44Z 2017-06-13T11:43:44Z 2005 Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 72.80 Rj, 73.61.Wp https://nasplib.isofts.kiev.ua/handle/123456789/120976 Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness. Authors express sincere gratitude to E.V. Basiuk for
 the availability to use their samples for measurements.
 The work was financially supported by the budgetary
 theme 1.4.1 В/109 of the Institute for Physics, NAS of
 Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers Article published earlier |
| spellingShingle | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers Koval'chuk, A.V. Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. |
| title | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers |
| title_full | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers |
| title_fullStr | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers |
| title_full_unstemmed | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers |
| title_short | Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers |
| title_sort | photoelectric properties of modified c₆₀ films. maxwell-vagner type polarization between near-electrode and bulk layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120976 |
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