Physico-Chemical model and computer simulations of silicon nanowire growth
A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas phase, processes near catalyst surface and nanowire side of variable curvature...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120978 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Physico-Chemical model and computer simulations of silicon nanowire growth / A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K. Grygoryev, S. Lukyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 1-11. — Бібліогр.: 37 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862734848305659904 |
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| author | Efremov, A. Klimovskaya, A. Kamins, T. Shanina, B. Grygoryev, K . Lukyanets, S . |
| author_facet | Efremov, A. Klimovskaya, A. Kamins, T. Shanina, B. Grygoryev, K . Lukyanets, S . |
| citation_txt | Physico-Chemical model and computer simulations of silicon nanowire growth / A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K. Grygoryev, S. Lukyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 1-11. — Бібліогр.: 37 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas phase, processes near catalyst surface and nanowire side of variable curvature, bulk diffusion of silicon adatoms through catalyst – body, and 2D nucleation. The simulation of atomic transport across surfaces is based on a long-wave approach of lattice gas approximation. To determine a character of atomic transport in TiSi₂-catalyst that is of great importance for application in Si-based technology, a density functional theory is used. The main result of modeling is that it is found a relationship between growth conditions (an initial radius of catalyst particles, their density, substrate temperature, content, pressure of gas, as well as properties of materials used) and, on the other hand, a growth rate, shape, composition, and type of atomic structure (amorphous or crystalline) of the nanowires grown. Besides, available experimental data published previously are discussed, and a qualitative agreement between theory and various experiments is obtained. This agreement gives rise to use the found relationship for controlling the nanowire growth.
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| first_indexed | 2025-12-07T19:45:03Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120978 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:45:03Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Efremov, A. Klimovskaya, A. Kamins, T. Shanina, B. Grygoryev, K . Lukyanets, S . 2017-06-13T11:50:09Z 2017-06-13T11:50:09Z 2005 Physico-Chemical model and computer simulations of silicon nanowire growth / A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K. Grygoryev, S. Lukyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 1-11. — Бібліогр.: 37 назв. — англ. 1560-8034 PACS: 68.70.+w, 81.10.-h, 81.15.Aa, 64.60.Qb https://nasplib.isofts.kiev.ua/handle/123456789/120978 A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas phase, processes near catalyst surface and nanowire side of variable curvature, bulk diffusion of silicon adatoms through catalyst – body, and 2D nucleation. The simulation of atomic transport across surfaces is based on a long-wave approach of lattice gas approximation. To determine a character of atomic transport in TiSi₂-catalyst that is of great importance for application in Si-based technology, a density functional theory is used. The main result of modeling is that it is found a relationship between growth conditions (an initial radius of catalyst particles, their density, substrate temperature, content, pressure of gas, as well as properties of materials used) and, on the other hand, a growth rate, shape, composition, and type of atomic structure (amorphous or crystalline) of the nanowires grown. Besides, available experimental data published previously are discussed, and a qualitative agreement between theory and various experiments is obtained. This agreement gives rise to use the found relationship for controlling the nanowire growth. This work was performed in the framework of CRDF Project # UE-5001-KV-03. The authors wish to express their sincere gratitude to Prof. P.M. Tomchuk (Institute of Physics, National Academy of Sciences of Ukraine) for helpful discussions. The authors also thank Dr. S. Sharma and Dr. R. Stanley Williams of Hewlett-Packard for providing experimental data and for useful
 Discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Physico-Chemical model and computer simulations of silicon nanowire growth Article published earlier |
| spellingShingle | Physico-Chemical model and computer simulations of silicon nanowire growth Efremov, A. Klimovskaya, A. Kamins, T. Shanina, B. Grygoryev, K . Lukyanets, S . |
| title | Physico-Chemical model and computer simulations of silicon nanowire growth |
| title_full | Physico-Chemical model and computer simulations of silicon nanowire growth |
| title_fullStr | Physico-Chemical model and computer simulations of silicon nanowire growth |
| title_full_unstemmed | Physico-Chemical model and computer simulations of silicon nanowire growth |
| title_short | Physico-Chemical model and computer simulations of silicon nanowire growth |
| title_sort | physico-chemical model and computer simulations of silicon nanowire growth |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120978 |
| work_keys_str_mv | AT efremova physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth AT klimovskayaa physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth AT kaminst physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth AT shaninab physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth AT grygoryevk physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth AT lukyanetss physicochemicalmodelandcomputersimulationsofsiliconnanowiregrowth |