Physico-Chemical model and computer simulations of silicon nanowire growth

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Efremov, A., Klimovskaya, A., Kamins, T., Shanina, B., Grygoryev, K ., Lukyanets, S .
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120978
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Physico-Chemical model and computer simulations of silicon nanowire growth / A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K. Grygoryev, S. Lukyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 1-11. — Бібліогр.: 37 назв. — англ.

A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas phase, processes near catalyst surface and nanowire side of variable curvature...