Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor

Electronic band structure of the diluted magnetic semiconductor
 Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight-
 binding method in the framework of sps*-model. Surface bands, emerging
 above the bulk band structure, as well as their t...

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Published in:Condensed Matter Physics
Date:2000
Main Authors: Melnichuk, S.V., Mikhailevsky, Y.M., Rarenko, I.M., Yurijchuk, I.M.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120985
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Cite this:Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor / S.V. Melnichuk, Y.M. Mikhailevsky, I.M. Rarenko, I.M. Yurijchuk // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 799-806. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Melnichuk, S.V.
Mikhailevsky, Y.M.
Rarenko, I.M.
Yurijchuk, I.M.
author_facet Melnichuk, S.V.
Mikhailevsky, Y.M.
Rarenko, I.M.
Yurijchuk, I.M.
citation_txt Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor / S.V. Melnichuk, Y.M. Mikhailevsky, I.M. Rarenko, I.M. Yurijchuk // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 799-806. — Бібліогр.: 12 назв. — англ.
collection DSpace DC
container_title Condensed Matter Physics
description Electronic band structure of the diluted magnetic semiconductor
 Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight-
 binding method in the framework of sps*-model. Surface bands, emerging
 above the bulk band structure, as well as their type, energy position and localization near the parting border with vacuum are investigated. It is shown
 that Mn 3d-states as well as sp-states play appreciable role in the formation
 of surface bands. The peculiarities of surface band structure are analyzed
 in the dependence of solid solution composition. Розраховано електронну зонну структуру iдеальної поверхнi [100]
 напiвмагнiтного напiвпровiдника Cd₁₋x Mn x Te в sps*-моделi сильного зв’язку, що включає катiоннi d -орбiталi. Вивчено зони поверхневих станiв, якi виникають на фонi спектра об’ємного кристалу, їх
 тип, енергетичне положення та просторову локалiзацiю бiля границь
 роздiлу з вакуумом. Показано, що поряд з sp -станами помiтну роль
 у формуваннi поверхневих станiв вiдiграють 3d -стани Mn. Аналiзуються особливостi спектра поверхнi залежно вiд складу твердого
 розчину.
first_indexed 2025-11-28T03:35:26Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2025-11-28T03:35:26Z
publishDate 2000
publisher Інститут фізики конденсованих систем НАН України
record_format dspace
spelling Melnichuk, S.V.
Mikhailevsky, Y.M.
Rarenko, I.M.
Yurijchuk, I.M.
2017-06-13T12:07:45Z
2017-06-13T12:07:45Z
2000
Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor / S.V. Melnichuk, Y.M. Mikhailevsky, I.M. Rarenko, I.M. Yurijchuk // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 799-806. — Бібліогр.: 12 назв. — англ.
1607-324X
DOI:10.5488/CMP.3.4.799
PACS: 73.20
https://nasplib.isofts.kiev.ua/handle/123456789/120985
Electronic band structure of the diluted magnetic semiconductor
 Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight-
 binding method in the framework of sps*-model. Surface bands, emerging
 above the bulk band structure, as well as their type, energy position and localization near the parting border with vacuum are investigated. It is shown
 that Mn 3d-states as well as sp-states play appreciable role in the formation
 of surface bands. The peculiarities of surface band structure are analyzed
 in the dependence of solid solution composition.
Розраховано електронну зонну структуру iдеальної поверхнi [100]
 напiвмагнiтного напiвпровiдника Cd₁₋x Mn x Te в sps*-моделi сильного зв’язку, що включає катiоннi d -орбiталi. Вивчено зони поверхневих станiв, якi виникають на фонi спектра об’ємного кристалу, їх
 тип, енергетичне положення та просторову локалiзацiю бiля границь
 роздiлу з вакуумом. Показано, що поряд з sp -станами помiтну роль
 у формуваннi поверхневих станiв вiдiграють 3d -стани Mn. Аналiзуються особливостi спектра поверхнi залежно вiд складу твердого
 розчину.
en
Інститут фізики конденсованих систем НАН України
Condensed Matter Physics
Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
Зонна структура поверхнi [100] напiвмагнiтного напiвпровiдника Cd₁₋x Mn x Te
Article
published earlier
spellingShingle Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
Melnichuk, S.V.
Mikhailevsky, Y.M.
Rarenko, I.M.
Yurijchuk, I.M.
title Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
title_alt Зонна структура поверхнi [100] напiвмагнiтного напiвпровiдника Cd₁₋x Mn x Te
title_full Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
title_fullStr Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
title_full_unstemmed Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
title_short Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
title_sort band structure of [100] surface of cd₁₋x mn x te diluted magnetic semiconductor
url https://nasplib.isofts.kiev.ua/handle/123456789/120985
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