Filling of electronic states and crystal lattice deformation around dislocation wall

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2000
• 1. Verfasser: Peleschak, R.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121045
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Filling of electronic states and crystal lattice deformation around dislocation wall / R.M. Peleschak // Condensed Matter Physics. — 2000. — Т. 3, № 1(21). — С. 169-174. — Бібліогр.: 7 назв. — англ.

Within the band model we study the electron redistribution around the dislocation wall depending on the conduction band filling ( 0 < n < 1 ) taking into account the electron-deformation coupling. We show that as the conduction band filling n increases, the redistribution gets more localized a...