Functionally graded PbTe-based compound for thermoelectric applications
The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals were grown by Czochralski technique. The penetration profiles of indium, diffu...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121076 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Functionally graded PbTe-based compound for thermoelectric applications / Z. Dashevsky, M.P. Dariel, S. Shusterman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 181-184. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862747066159071232 |
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| author | Dashevsky, Z. Dariel, M.P. Shusterman, S. |
| author_facet | Dashevsky, Z. Dariel, M.P. Shusterman, S. |
| citation_txt | Functionally graded PbTe-based compound for thermoelectric applications / Z. Dashevsky, M.P. Dariel, S. Shusterman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 181-184. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals were grown by Czochralski technique. The penetration profiles of indium, diffusing from an external gaseous source was determined using Seebeck coefficient measurements in PbTe doped preliminary by Na impurity. The Seebeck coefficient changed a sign as the indium concentration induced a change from p-type to n-type character. Doping by indium generates deep impurity states lying close to the edge of the conduction band. Electron concentration practically didn't change along PbTe<In> crystal while indium concentration changed from 3·10¹⁹ to 5·10²⁰ cm⁻³. The thermovoltage V of a PbTe crystal in which an In concentration profile had been established was determined up to temperature ≈600 °C (in this case temperature of the cold side was constant ≈50 °C). It was discovered that V increases linearly with increasing temperature difference. This effect is connected with practically constant value of Seebeck's coefficient in a wide temperature range through stabilization (pinning) of Fermi level by producing a concentration gradient of In impurity in PbTe crystals.
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| first_indexed | 2025-12-07T20:48:49Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121076 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:48:49Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Dashevsky, Z. Dariel, M.P. Shusterman, S. 2017-06-13T14:25:55Z 2017-06-13T14:25:55Z 2000 Functionally graded PbTe-based compound for thermoelectric applications / Z. Dashevsky, M.P. Dariel, S. Shusterman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 181-184. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 72.20.P https://nasplib.isofts.kiev.ua/handle/123456789/121076 The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals were grown by Czochralski technique. The penetration profiles of indium, diffusing from an external gaseous source was determined using Seebeck coefficient measurements in PbTe doped preliminary by Na impurity. The Seebeck coefficient changed a sign as the indium concentration induced a change from p-type to n-type character. Doping by indium generates deep impurity states lying close to the edge of the conduction band. Electron concentration practically didn't change along PbTe<In> crystal while indium concentration changed from 3·10¹⁹ to 5·10²⁰ cm⁻³. The thermovoltage V of a PbTe crystal in which an In concentration profile had been established was determined up to temperature ≈600 °C (in this case temperature of the cold side was constant ≈50 °C). It was discovered that V increases linearly with increasing temperature difference. This effect is connected with practically constant value of Seebeck's coefficient in a wide temperature range through stabilization (pinning) of Fermi level by producing a concentration gradient of In impurity in PbTe crystals. The support of the Israel Science Foundation for the present study within the framework of program 319/97 is gratefully acknowledged. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Functionally graded PbTe-based compound for thermoelectric applications Article published earlier |
| spellingShingle | Functionally graded PbTe-based compound for thermoelectric applications Dashevsky, Z. Dariel, M.P. Shusterman, S. |
| title | Functionally graded PbTe-based compound for thermoelectric applications |
| title_full | Functionally graded PbTe-based compound for thermoelectric applications |
| title_fullStr | Functionally graded PbTe-based compound for thermoelectric applications |
| title_full_unstemmed | Functionally graded PbTe-based compound for thermoelectric applications |
| title_short | Functionally graded PbTe-based compound for thermoelectric applications |
| title_sort | functionally graded pbte-based compound for thermoelectric applications |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121076 |
| work_keys_str_mv | AT dashevskyz functionallygradedpbtebasedcompoundforthermoelectricapplications AT darielmp functionallygradedpbtebasedcompoundforthermoelectricapplications AT shustermans functionallygradedpbtebasedcompoundforthermoelectricapplications |