Specificity of high-pure monocrystalline silicon production for various registering and converting devices
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121082 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121082 |
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Trubitsyn, Yu.V. Zverev, S.V. 2017-06-13T14:28:20Z 2017-06-13T14:28:20Z 2000 Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C https://nasplib.isofts.kiev.ua/handle/123456789/121082 In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Specificity of high-pure monocrystalline silicon production for various registering and converting devices Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| spellingShingle |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices Trubitsyn, Yu.V. Zverev, S.V. |
| title_short |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_fullStr |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full_unstemmed |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_sort |
specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| author |
Trubitsyn, Yu.V. Zverev, S.V. |
| author_facet |
Trubitsyn, Yu.V. Zverev, S.V. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121082 |
| citation_txt |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
| work_keys_str_mv |
AT trubitsynyuv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices AT zverevsv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices |
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2025-12-07T17:31:36Z |
| last_indexed |
2025-12-07T17:31:36Z |
| _version_ |
1850871587696279552 |