Specificity of high-pure monocrystalline silicon production for various registering and converting devices

In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
Main Authors: Trubitsyn, Yu.V., Zverev, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121082
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Trubitsyn, Yu.V.
Zverev, S.V.
author_facet Trubitsyn, Yu.V.
Zverev, S.V.
citation_txt Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
first_indexed 2025-12-07T17:31:36Z
format Article
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id nasplib_isofts_kiev_ua-123456789-121082
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T17:31:36Z
publishDate 2000
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Trubitsyn, Yu.V.
Zverev, S.V.
2017-06-13T14:28:20Z
2017-06-13T14:28:20Z
2000
Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C
https://nasplib.isofts.kiev.ua/handle/123456789/121082
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Specificity of high-pure monocrystalline silicon production for various registering and converting devices
Article
published earlier
spellingShingle Specificity of high-pure monocrystalline silicon production for various registering and converting devices
Trubitsyn, Yu.V.
Zverev, S.V.
title Specificity of high-pure monocrystalline silicon production for various registering and converting devices
title_full Specificity of high-pure monocrystalline silicon production for various registering and converting devices
title_fullStr Specificity of high-pure monocrystalline silicon production for various registering and converting devices
title_full_unstemmed Specificity of high-pure monocrystalline silicon production for various registering and converting devices
title_short Specificity of high-pure monocrystalline silicon production for various registering and converting devices
title_sort specificity of high-pure monocrystalline silicon production for various registering and converting devices
url https://nasplib.isofts.kiev.ua/handle/123456789/121082
work_keys_str_mv AT trubitsynyuv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices
AT zverevsv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices