Specificity of high-pure monocrystalline silicon production for various registering and converting devices
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121082 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711595688263680 |
|---|---|
| author | Trubitsyn, Yu.V. Zverev, S.V. |
| author_facet | Trubitsyn, Yu.V. Zverev, S.V. |
| citation_txt | Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.
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| first_indexed | 2025-12-07T17:31:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121082 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:31:36Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Trubitsyn, Yu.V. Zverev, S.V. 2017-06-13T14:28:20Z 2017-06-13T14:28:20Z 2000 Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C https://nasplib.isofts.kiev.ua/handle/123456789/121082 In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Specificity of high-pure monocrystalline silicon production for various registering and converting devices Article published earlier |
| spellingShingle | Specificity of high-pure monocrystalline silicon production for various registering and converting devices Trubitsyn, Yu.V. Zverev, S.V. |
| title | Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full | Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_fullStr | Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full_unstemmed | Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_short | Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_sort | specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121082 |
| work_keys_str_mv | AT trubitsynyuv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices AT zverevsv specificityofhighpuremonocrystallinesiliconproductionforvariousregisteringandconvertingdevices |