Rapidly grown KDP crystals

Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. A comparative analysis of KDP characteristics for crystals grown by conventio...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2000
Автор: Salo, V.I.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121084
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Rapidly grown KDP crystals / V.I. Salo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 200-202. — Бібліогр.: 4 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Salo, V.I.
author_facet Salo, V.I.
citation_txt Rapidly grown KDP crystals / V.I. Salo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 200-202. — Бібліогр.: 4 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. A comparative analysis of KDP characteristics for crystals grown by conventional method at a rate of 1 mm/day and by the method of oriented growth at a rate of 10 mm/day is presented. It is shown that elaborated method allows to obtain blanks of nonlinear elements already at the stage of growth. The grown crystals have the bulk laser damage threshold on the level of ~5⋅10¹⁰ cm² and high structure quality; thus it allows to apply them as multipliers of laser radiation frequency.
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T13:08:58Z
publishDate 2000
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Salo, V.I.
2017-06-13T14:28:52Z
2017-06-13T14:28:52Z
2000
Rapidly grown KDP crystals / V.I. Salo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 200-202. — Бібліогр.: 4 назв. — англ.
1560-8034
PACS: 81.10.- h, Fq, 78.20.- e, 77.84.Fa, 42.88.+ h
https://nasplib.isofts.kiev.ua/handle/123456789/121084
Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. A comparative analysis of KDP characteristics for crystals grown by conventional method at a rate of 1 mm/day and by the method of oriented growth at a rate of 10 mm/day is presented. It is shown that elaborated method allows to obtain blanks of nonlinear elements already at the stage of growth. The grown crystals have the bulk laser damage threshold on the level of ~5⋅10¹⁰ cm² and high structure quality; thus it allows to apply them as multipliers of laser radiation frequency.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Rapidly grown KDP crystals
Article
published earlier
spellingShingle Rapidly grown KDP crystals
Salo, V.I.
title Rapidly grown KDP crystals
title_full Rapidly grown KDP crystals
title_fullStr Rapidly grown KDP crystals
title_full_unstemmed Rapidly grown KDP crystals
title_short Rapidly grown KDP crystals
title_sort rapidly grown kdp crystals
url https://nasplib.isofts.kiev.ua/handle/123456789/121084
work_keys_str_mv AT salovi rapidlygrownkdpcrystals