Microstructure of the relaxed (001) Si surface
MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) silicon surface were discovered by using the improved calculation scheme for...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121091 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Microstructure of the relaxed (001) Si surface / A.E. Kiv, V.N. Soloviev, T.I. Maximova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 157-160. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726222326267904 |
|---|---|
| author | Kiv, A.E. Soloviev, V.N. Maximova, T.I. |
| author_facet | Kiv, A.E. Soloviev, V.N. Maximova, T.I. |
| citation_txt | Microstructure of the relaxed (001) Si surface / A.E. Kiv, V.N. Soloviev, T.I. Maximova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 157-160. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) silicon surface were discovered by using the improved calculation scheme for diamond-like structure simulation. It was established that the relaxed microstructure of clean (001) Si surface is characterized by dangling bonds in the first three near-surface layers and by non-hexagonal polygons. Besides, the dimer formation was observed not only in the first layer. New space configurations of dimers were found. Ascertained were some conditions which lead to the effect of radiation-stimulated relaxation of surface layers under the ion bombardment in the energy region of the threshold of elastic atomic displacements in silicon.
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| first_indexed | 2025-12-07T18:57:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121091 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:57:10Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kiv, A.E. Soloviev, V.N. Maximova, T.I. 2017-06-13T14:50:15Z 2017-06-13T14:50:15Z 2000 Microstructure of the relaxed (001) Si surface / A.E. Kiv, V.N. Soloviev, T.I. Maximova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 157-160. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.60.Kw https://nasplib.isofts.kiev.ua/handle/123456789/121091 MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) silicon surface were discovered by using the improved calculation scheme for diamond-like structure simulation. It was established that the relaxed microstructure of clean (001) Si surface is characterized by dangling bonds in the first three near-surface layers and by non-hexagonal polygons. Besides, the dimer formation was observed not only in the first layer. New space configurations of dimers were found. Ascertained were some conditions which lead to the effect of radiation-stimulated relaxation of surface layers under the ion bombardment in the energy region of the threshold of elastic atomic displacements in silicon. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Microstructure of the relaxed (001) Si surface Article published earlier |
| spellingShingle | Microstructure of the relaxed (001) Si surface Kiv, A.E. Soloviev, V.N. Maximova, T.I. |
| title | Microstructure of the relaxed (001) Si surface |
| title_full | Microstructure of the relaxed (001) Si surface |
| title_fullStr | Microstructure of the relaxed (001) Si surface |
| title_full_unstemmed | Microstructure of the relaxed (001) Si surface |
| title_short | Microstructure of the relaxed (001) Si surface |
| title_sort | microstructure of the relaxed (001) si surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121091 |
| work_keys_str_mv | AT kivae microstructureoftherelaxed001sisurface AT solovievvn microstructureoftherelaxed001sisurface AT maximovati microstructureoftherelaxed001sisurface |