The effect of oxygen-containing anions on luminescent properties of CsI

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2000
• Автори: Shpilinskaya, L.N., Zaslavsky, B.G., Kovaleva, L.V., Vasetsky, S.I., Kudin, A.M., Mitichkin, A.I., Charkina, T.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121092
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ.

It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed.