The effect of oxygen-containing anions on luminescent properties of CsI
It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121092 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862670794349346816 |
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| author | Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
| author_facet | Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
| citation_txt | The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed.
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| first_indexed | 2025-12-07T15:32:14Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121092 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:32:14Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. 2017-06-13T14:51:12Z 2017-06-13T14:51:12Z 2000 The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 78.55.Fv, - m, 78.60.- b, Ya https://nasplib.isofts.kiev.ua/handle/123456789/121092 It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The effect of oxygen-containing anions on luminescent properties of CsI Article published earlier |
| spellingShingle | The effect of oxygen-containing anions on luminescent properties of CsI Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
| title | The effect of oxygen-containing anions on luminescent properties of CsI |
| title_full | The effect of oxygen-containing anions on luminescent properties of CsI |
| title_fullStr | The effect of oxygen-containing anions on luminescent properties of CsI |
| title_full_unstemmed | The effect of oxygen-containing anions on luminescent properties of CsI |
| title_short | The effect of oxygen-containing anions on luminescent properties of CsI |
| title_sort | effect of oxygen-containing anions on luminescent properties of csi |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121092 |
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