Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufacture...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121122 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862527315767984128 |
|---|---|
| author | Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. |
| author_facet | Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. |
| citation_txt | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems.
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| first_indexed | 2025-12-07T20:10:48Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121122 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:10:48Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. 2017-06-13T15:20:29Z 2017-06-13T15:20:29Z 2002 Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 78.20.-e https://nasplib.isofts.kiev.ua/handle/123456789/121122 The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector Article published earlier |
| spellingShingle | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. |
| title | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_full | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_fullStr | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_full_unstemmed | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_short | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_sort | thin film pzt-si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121122 |
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