Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufacture...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2002
Автори: Bravina, S.L., Cattan, E., Morozovsky, N.V., Remiens, D.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121122
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862739717494145024
author Bravina, S.L.
Cattan, E.
Morozovsky, N.V.
Remiens, D.
author_facet Bravina, S.L.
Cattan, E.
Morozovsky, N.V.
Remiens, D.
citation_txt Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems.
first_indexed 2025-12-07T20:10:48Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-121122
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T20:10:48Z
publishDate 2002
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Bravina, S.L.
Cattan, E.
Morozovsky, N.V.
Remiens, D.
2017-06-13T15:20:29Z
2017-06-13T15:20:29Z
2002
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS: 78.20.-e
https://nasplib.isofts.kiev.ua/handle/123456789/121122
The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
Article
published earlier
spellingShingle Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
Bravina, S.L.
Cattan, E.
Morozovsky, N.V.
Remiens, D.
title Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
title_full Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
title_fullStr Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
title_full_unstemmed Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
title_short Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
title_sort thin film pzt-si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
url https://nasplib.isofts.kiev.ua/handle/123456789/121122
work_keys_str_mv AT bravinasl thinfilmpztsistructurewithquadrantdiagonalelectrodesystemasanelementofpositionsensitivepyroelectricdetector
AT cattane thinfilmpztsistructurewithquadrantdiagonalelectrodesystemasanelementofpositionsensitivepyroelectricdetector
AT morozovskynv thinfilmpztsistructurewithquadrantdiagonalelectrodesystemasanelementofpositionsensitivepyroelectricdetector
AT remiensd thinfilmpztsistructurewithquadrantdiagonalelectrodesystemasanelementofpositionsensitivepyroelectricdetector