Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Bravina, S.L., Cattan, E., Morozovsky, N.V., Remiens, D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121122
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ.

The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufacture...