On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior
Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at....
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121128 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862573792431177728 |
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| author | Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. |
| author_facet | Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. |
| citation_txt | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at. %) were deposited by electron-beam evaporation and two atomic-layer epitaxy processes based on chlorine (ZnCl₂, MnCl₂) or organic (diethyl Zn and Mn(thd)₃ ) precursors. It has been studied interrelation between these peculiarities and the differences observed in the photodepolarization spectra of the devices, which give data about defects in the ZnS:Mn films and the energy of corresponding local states in them. The obtained results are discussed as to physical processes responsible for the rapid portion of the above voltage dependences and for the causes of its change after short-time accelerated aging.
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| first_indexed | 2025-11-26T08:18:06Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121128 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T08:18:06Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. 2017-06-13T15:28:09Z 2017-06-13T15:28:09Z 2002 On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.55.Gs, 78.60.Fi, 78.66.Hf https://nasplib.isofts.kiev.ua/handle/123456789/121128 Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at. %) were deposited by electron-beam evaporation and two atomic-layer epitaxy processes based on chlorine (ZnCl₂, MnCl₂) or organic (diethyl Zn and Mn(thd)₃ ) precursors. It has been studied interrelation between these peculiarities and the differences observed in the photodepolarization spectra of the devices, which give data about defects in the ZnS:Mn films and the energy of corresponding local states in them. The obtained results are discussed as to physical processes responsible for the rapid portion of the above voltage dependences and for the causes of its change after short-time accelerated aging. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior Article published earlier |
| spellingShingle | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. |
| title | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_full | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_fullStr | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_full_unstemmed | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_short | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_sort | on origin of rapid portion of luminance-voltage dependence of zns:mn tfel devices and its aging behavior |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121128 |
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