Diffusion model of defect formation in silicon under light ion implantation
In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into accoun...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121130 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy.
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| ISSN: | 1560-8034 |