Diffusion model of defect formation in silicon under light ion implantation
In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into accoun...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121130 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862684061962600448 |
|---|---|
| author | Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. |
| author_facet | Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. |
| citation_txt | Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy.
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| first_indexed | 2025-12-07T15:57:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121130 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:57:59Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. 2017-06-13T15:31:16Z 2017-06-13T15:31:16Z 2000 Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.78.T, 66.30 https://nasplib.isofts.kiev.ua/handle/123456789/121130 In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Diffusion model of defect formation in silicon under light ion implantation Article published earlier |
| spellingShingle | Diffusion model of defect formation in silicon under light ion implantation Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. |
| title | Diffusion model of defect formation in silicon under light ion implantation |
| title_full | Diffusion model of defect formation in silicon under light ion implantation |
| title_fullStr | Diffusion model of defect formation in silicon under light ion implantation |
| title_full_unstemmed | Diffusion model of defect formation in silicon under light ion implantation |
| title_short | Diffusion model of defect formation in silicon under light ion implantation |
| title_sort | diffusion model of defect formation in silicon under light ion implantation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121130 |
| work_keys_str_mv | AT voznyymv diffusionmodelofdefectformationinsiliconunderlightionimplantation AT gorleypm diffusionmodelofdefectformationinsiliconunderlightionimplantation AT schenderovskyyva diffusionmodelofdefectformationinsiliconunderlightionimplantation |