Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Haccart, T., Cattan, E., Remiens, D.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121131
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation / T. Haccart, E. Cattan, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 78-88. — Бібліогр.: 45 назв. — англ.

Lead titanate zirconate Pb(Zr,Ti)O₃ (PZT) thin films were deposited on platinized silicon substrates by r.f. magnetron sputtering and crystallized with preferred (110) or (111) orientation by conventional annealing treatment. The film structure evolution was observed as a function of the film thickn...