Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity co...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121132 |
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| Zitieren: | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862669393529405440 |
|---|---|
| author | Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| author_facet | Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| citation_txt | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.
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| first_indexed | 2025-12-07T15:28:44Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121132 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:28:44Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. 2017-06-13T15:33:15Z 2017-06-13T15:33:15Z 2000 Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.72.V, 42.70.K, 71.28, 61.72.H https://nasplib.isofts.kiev.ua/handle/123456789/121132 The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K. The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys Article published earlier |
| spellingShingle | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| title | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_full | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_fullStr | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_full_unstemmed | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_short | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_sort | acoustodynamic transformation of the defect structure in hg₁₋xcdx te alloys |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121132 |
| work_keys_str_mv | AT olikhym acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys AT savkinark acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys AT vlasenkooi acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys |