Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity co...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Zitieren: | Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. |
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Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. 2017-06-13T15:33:15Z 2017-06-13T15:33:15Z 2000 Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.72.V, 42.70.K, 71.28, 61.72.H https://nasplib.isofts.kiev.ua/handle/123456789/121132 The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K. The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| spellingShingle |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| title_short |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_full |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_fullStr |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_full_unstemmed |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys |
| title_sort |
acoustodynamic transformation of the defect structure in hg₁₋xcdx te alloys |
| author |
Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| author_facet |
Olikh, Y.M. Savkina, R.K. Vlasenko, O.I. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.
The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121132 |
| citation_txt |
Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ. |
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AT olikhym acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys AT savkinark acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys AT vlasenkooi acoustodynamictransformationofthedefectstructureinhg1xcdxtealloys |
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2025-12-07T15:28:44Z |
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2025-12-07T15:28:44Z |
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