Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon

We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law rec...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2000
Автори: Gorban, A.P., Sachenko, A.V., Kostylyov, V.P., Prima, N.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121135
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121135
record_format dspace
spelling Gorban, A.P.
Sachenko, A.V.
Kostylyov, V.P.
Prima, N.A.
2017-06-13T15:34:39Z
2017-06-13T15:34:39Z
2000
Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ.
1560-8034
PACS 84.60.J, 72.20.J
https://nasplib.isofts.kiev.ua/handle/123456789/121135
We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law recombination of electron-hole pairs. It was shown that the effect of nonradiative exciton annihilation on the photoconversion efficiency is particularly profound in p⁺-n-n⁺-structures. In solar cells based on them the total action of all the excitonic effects leads to an about 10% decrease in the limiting value of photoconversion efficiency. At the same time for n⁺-p-p⁺-structures the reduction of this value due to the excitonic effects is about 5%. As a result, their limiting value of photoconversion efficiency is higher than that in p⁺-n-n⁺-structures.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
spellingShingle Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
Gorban, A.P.
Sachenko, A.V.
Kostylyov, V.P.
Prima, N.A.
title_short Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
title_full Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
title_fullStr Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
title_full_unstemmed Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
title_sort effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
author Gorban, A.P.
Sachenko, A.V.
Kostylyov, V.P.
Prima, N.A.
author_facet Gorban, A.P.
Sachenko, A.V.
Kostylyov, V.P.
Prima, N.A.
publishDate 2000
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law recombination of electron-hole pairs. It was shown that the effect of nonradiative exciton annihilation on the photoconversion efficiency is particularly profound in p⁺-n-n⁺-structures. In solar cells based on them the total action of all the excitonic effects leads to an about 10% decrease in the limiting value of photoconversion efficiency. At the same time for n⁺-p-p⁺-structures the reduction of this value due to the excitonic effects is about 5%. As a result, their limiting value of photoconversion efficiency is higher than that in p⁺-n-n⁺-structures.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121135
citation_txt Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ.
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AT kostylyovvp effectofexcitonsonphotoconversionefficiencyinthepnnandnppstructuresbasedonsinglecrystallinesilicon
AT primana effectofexcitonsonphotoconversionefficiencyinthepnnandnppstructuresbasedonsinglecrystallinesilicon
first_indexed 2025-12-07T16:45:51Z
last_indexed 2025-12-07T16:45:51Z
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