Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon
We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law rec...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121135 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862702621256581120 |
|---|---|
| author | Gorban, A.P. Sachenko, A.V. Kostylyov, V.P. Prima, N.A. |
| author_facet | Gorban, A.P. Sachenko, A.V. Kostylyov, V.P. Prima, N.A. |
| citation_txt | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law recombination of electron-hole pairs. It was shown that the effect of nonradiative exciton annihilation on the photoconversion efficiency is particularly profound in p⁺-n-n⁺-structures. In solar cells based on them the total action of all the excitonic effects leads to an about 10% decrease in the limiting value of photoconversion efficiency. At the same time for n⁺-p-p⁺-structures the reduction of this value due to the excitonic effects is about 5%. As a result, their limiting value of photoconversion efficiency is higher than that in p⁺-n-n⁺-structures.
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| first_indexed | 2025-12-07T16:45:51Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121135 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:45:51Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Gorban, A.P. Sachenko, A.V. Kostylyov, V.P. Prima, N.A. 2017-06-13T15:34:39Z 2017-06-13T15:34:39Z 2000 Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon / A.P. Gorban, A.V. Sachenko, V.P. Kostylyov, N.A. Prima // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 322-329. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/121135 We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and nonradiative exciton annihilation. They manifest themselves as square-law recombination of electron-hole pairs. It was shown that the effect of nonradiative exciton annihilation on the photoconversion efficiency is particularly profound in p⁺-n-n⁺-structures. In solar cells based on them the total action of all the excitonic effects leads to an about 10% decrease in the limiting value of photoconversion efficiency. At the same time for n⁺-p-p⁺-structures the reduction of this value due to the excitonic effects is about 5%. As a result, their limiting value of photoconversion efficiency is higher than that in p⁺-n-n⁺-structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon Article published earlier |
| spellingShingle | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon Gorban, A.P. Sachenko, A.V. Kostylyov, V.P. Prima, N.A. |
| title | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| title_full | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| title_fullStr | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| title_full_unstemmed | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| title_short | Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| title_sort | effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121135 |
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