Photoinduced structural changes in As₁₀₀₋xSx layers
The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of re...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121137 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862748986781204480 |
|---|---|
| author | Stronski, A. Vlcek, M. Sklenar, A. |
| author_facet | Stronski, A. Vlcek, M. Sklenar, A. |
| citation_txt | Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of refractive index n for variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀S₆₀ and, possibly, weak maximum at As₂₈.₆S₇₁.₄ composition. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Intensity dependence of the Raman bands corresponding to the As rich and S rich molecular fragments on exposure time is well described by the exponential decay, which correlates with exponential decay dependence of the etching rate of As₁₀₀₋xSx layers on exposure.
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| first_indexed | 2025-12-07T20:57:54Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121137 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:57:54Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Stronski, A. Vlcek, M. Sklenar, A. 2017-06-13T15:36:26Z 2017-06-13T15:36:26Z 2000 Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS: 78.30L, 78.66.J, 81.05.Gc https://nasplib.isofts.kiev.ua/handle/123456789/121137 The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of refractive index n for variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀S₆₀ and, possibly, weak maximum at As₂₈.₆S₇₁.₄ composition. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes, which were directly confirmed by Raman scattering measurements. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Intensity dependence of the Raman bands corresponding to the As rich and S rich molecular fragments on exposure time is well described by the exponential decay, which correlates with exponential decay dependence of the etching rate of As₁₀₀₋xSx layers on exposure. This work was partially supported by the Fund for the development of High School of the Czech Ministry of Education, Youth and Sports under Grant F3/9/1999 and grant 203/99/0420 of the Grant Agency of the Czech Republic. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoinduced structural changes in As₁₀₀₋xSx layers Article published earlier |
| spellingShingle | Photoinduced structural changes in As₁₀₀₋xSx layers Stronski, A. Vlcek, M. Sklenar, A. |
| title | Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_full | Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_fullStr | Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_full_unstemmed | Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_short | Photoinduced structural changes in As₁₀₀₋xSx layers |
| title_sort | photoinduced structural changes in as₁₀₀₋xsx layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121137 |
| work_keys_str_mv | AT stronskia photoinducedstructuralchangesinas100xsxlayers AT vlcekm photoinducedstructuralchangesinas100xsxlayers AT sklenara photoinducedstructuralchangesinas100xsxlayers |