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Photoinduced structural changes in As₁₀₀₋xSx layers

The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission measurements in the spectral region 400-2500 nm. The energy dependence of re...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
ISSN:1560-8034
Main Authors: Stronski, A., Vlcek, M., Sklenar, A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121137
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photoinduced structural changes in As₁₀₀₋xSx layers / A. Stronski, M. Vlcek, A. Sklenar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 394-399. — Бібліогр.: 29 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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