Silicon carbide LED
Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their operational characteristics. This in¬cludes the influences of the surface pr...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2002 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121138 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Silicon carbide LED / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 71-75. — Бібліогр.: 2 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121138 |
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dspace |
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Vlaskina, S.I. 2017-06-13T15:36:36Z 2017-06-13T15:36:36Z 2002 Silicon carbide LED / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 71-75. — Бібліогр.: 2 назв. — англ. 1560-8034 PACS: 77.55.+f, 77.80. https://nasplib.isofts.kiev.ua/handle/123456789/121138 Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their operational characteristics. This in¬cludes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al⁺ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m² with passing current about 0.5 mA through area 50x50 mm and applied voltage about 2.6 ± 0.2 V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600 K. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Silicon carbide LED Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Silicon carbide LED |
| spellingShingle |
Silicon carbide LED Vlaskina, S.I. |
| title_short |
Silicon carbide LED |
| title_full |
Silicon carbide LED |
| title_fullStr |
Silicon carbide LED |
| title_full_unstemmed |
Silicon carbide LED |
| title_sort |
silicon carbide led |
| author |
Vlaskina, S.I. |
| author_facet |
Vlaskina, S.I. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their operational characteristics. This in¬cludes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al⁺ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m² with passing current about 0.5 mA through area 50x50 mm and applied voltage about 2.6 ± 0.2 V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600 K.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121138 |
| fulltext |
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| citation_txt |
Silicon carbide LED / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 71-75. — Бібліогр.: 2 назв. — англ. |
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AT vlaskinasi siliconcarbideled |
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2025-11-24T06:16:28Z |
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2025-11-24T06:16:28Z |
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