Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121140 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121140 |
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Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. 2017-06-13T15:37:13Z 2017-06-13T15:37:13Z 2000 Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 78.40.-q; 78.55.-m; 78.70.En https://nasplib.isofts.kiev.ua/handle/123456789/121140 Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| spellingShingle |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
| title_short |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_full |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_fullStr |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_full_unstemmed |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_sort |
luminescence and radiation-induced defects in li₂b₄o₇:eu single crystals |
| author |
Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
| author_facet |
Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121140 |
| citation_txt |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. |
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2025-12-07T18:48:06Z |
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