Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals

Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2000
Автори: Dubovik, M.F., Tolmachev, A.V., Grinyov, B.V., Grin, L.A., Dolzhenkova, E.F., Dobrotvorskaya, M.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121140
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121140
record_format dspace
spelling Dubovik, M.F.
Tolmachev, A.V.
Grinyov, B.V.
Grin, L.A.
Dolzhenkova, E.F.
Dobrotvorskaya, M.V.
2017-06-13T15:37:13Z
2017-06-13T15:37:13Z
2000
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ.
1560-8034
PACS: 78.40.-q; 78.55.-m; 78.70.En
https://nasplib.isofts.kiev.ua/handle/123456789/121140
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
spellingShingle Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
Dubovik, M.F.
Tolmachev, A.V.
Grinyov, B.V.
Grin, L.A.
Dolzhenkova, E.F.
Dobrotvorskaya, M.V.
title_short Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
title_full Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
title_fullStr Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
title_full_unstemmed Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
title_sort luminescence and radiation-induced defects in li₂b₄o₇:eu single crystals
author Dubovik, M.F.
Tolmachev, A.V.
Grinyov, B.V.
Grin, L.A.
Dolzhenkova, E.F.
Dobrotvorskaya, M.V.
author_facet Dubovik, M.F.
Tolmachev, A.V.
Grinyov, B.V.
Grin, L.A.
Dolzhenkova, E.F.
Dobrotvorskaya, M.V.
publishDate 2000
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121140
citation_txt Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ.
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AT grinla luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals
AT dolzhenkovaef luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals
AT dobrotvorskayamv luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals
first_indexed 2025-12-07T18:48:06Z
last_indexed 2025-12-07T18:48:06Z
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