Melt instabilities on semiconductor surfaces induced by laser radiation
Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121141 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700629364834304 |
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| author | Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. |
| author_facet | Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. |
| citation_txt | Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and charge carrier concentration can take place in electron-hole plasma, generated by laser radiation. Besides, there exists a positive feedback between the temperature of crystal lattice and charge carrier concentration in the region of their fluctuation. It causes both amplification of original fluctuation of temperature and generation of quasi-periodic temperature fields of large amplitude in semiconductors. The nonuniform temperature fields determine the features of surface relief formation in a zone of laser radiation action.
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| first_indexed | 2025-12-07T16:40:16Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121141 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:40:16Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. 2017-06-13T15:38:00Z 2017-06-13T15:38:00Z 2000 Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 72.20; 72.40; 73.20; 42.62 https://nasplib.isofts.kiev.ua/handle/123456789/121141 Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and charge carrier concentration can take place in electron-hole plasma, generated by laser radiation. Besides, there exists a positive feedback between the temperature of crystal lattice and charge carrier concentration in the region of their fluctuation. It causes both amplification of original fluctuation of temperature and generation of quasi-periodic temperature fields of large amplitude in semiconductors. The nonuniform temperature fields determine the features of surface relief formation in a zone of laser radiation action. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Melt instabilities on semiconductor surfaces induced by laser radiation Article published earlier |
| spellingShingle | Melt instabilities on semiconductor surfaces induced by laser radiation Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. |
| title | Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_full | Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_fullStr | Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_full_unstemmed | Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_short | Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_sort | melt instabilities on semiconductor surfaces induced by laser radiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121141 |
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